Micron Technology_NAND512W3A2CN6E
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Micron Technology
NAND512W3A2CN6E

774-NAND512W3A2CN6E
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IC FLASH 512MBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND512W3A2CN6E Description

NAND512W3A2CN6E Description

The NAND512W3A2CN6E is a 512 Mbit Flash memory IC, designed for high-performance applications requiring reliable and efficient data storage. Manufactured by Micron Technology Inc., this device is part of the NAND512 family and features a parallel memory interface, providing fast data transfer rates and low access times. The memory is organized as 64M x 8, ensuring robust storage capacity and flexibility for various applications. The NAND512W3A2CN6E operates within a supply voltage range of 2.7V to 3.6V, making it suitable for a wide range of electronic systems.

NAND512W3A2CN6E Features

  • Memory Size: 512 Mbit, offering substantial storage capacity for complex data storage needs.
  • Memory Organization: 64M x 8, providing a balanced memory structure that supports efficient data handling.
  • Memory Interface: Parallel, enabling high-speed data transfer and quick access to stored information.
  • Access Time: 50 ns, ensuring rapid data retrieval and minimizing system latency.
  • Write Cycle Time: 50 ns for both word and page operations, facilitating quick data updates and modifications.
  • Voltage - Supply: 2.7V to 3.6V, providing compatibility with a broad range of power supplies and system designs.
  • Mounting Type: Surface Mount, allowing for compact and reliable integration into modern electronic devices.
  • Package: 48TSOP, offering a robust and space-efficient packaging solution.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring the device remains stable and functional in various environmental conditions.
  • Compliance: REACH Unaffected and ROHS3 Compliant, meeting stringent environmental and safety standards.

NAND512W3A2CN6E Applications

The NAND512W3A2CN6E is ideal for applications that require high-speed data access and reliable storage. Its parallel memory interface and low access times make it particularly suitable for:

  • Embedded Systems: Providing fast and efficient data storage for embedded applications, such as industrial controllers and IoT devices.
  • Consumer Electronics: Enhancing the performance of consumer devices, such as digital cameras, media players, and smart home appliances.
  • Automotive Systems: Ensuring reliable data storage and quick access for automotive infotainment and control systems.
  • Medical Devices: Supporting critical data storage and retrieval in medical equipment, such as diagnostic tools and monitoring devices.

Conclusion of NAND512W3A2CN6E

The NAND512W3A2CN6E is a high-performance Flash memory IC that offers significant advantages over similar models. Its 512 Mbit storage capacity, parallel memory interface, and low access times make it a versatile and reliable choice for a wide range of applications. The device's compatibility with various power supplies and its robust packaging ensure seamless integration into modern electronic systems. While the product is now obsolete, its legacy continues to influence the design and development of future memory solutions. For applications requiring reliable and efficient data storage, the NAND512W3A2CN6E remains a notable option.

FAQ

What voltage specification is listed for NAND512W3A2CN6E?
The listed voltage-related specification for NAND512W3A2CN6E is 2.7V ~ 3.6V.
What package or case is NAND512W3A2CN6E available in?
What is NAND512W3A2CN6E?
What is the mounting type of NAND512W3A2CN6E?
Are there related or alternative parts for NAND512W3A2CN6E?
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