Micron Technology_NAND512W3A2DN6E
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Micron Technology
NAND512W3A2DN6E

774-NAND512W3A2DN6E
IC FLASH 512MBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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NAND512W3A2DN6E Description

NAND512W3A2DN6E Description

The NAND512W3A2DN6E is a high-performance, 512 Mbit Flash memory IC designed for a wide range of applications requiring reliable and efficient data storage. Manufactured by Micron Technology Inc., this memory IC chip features a parallel memory interface and is organized in a 64M x 8 configuration. It is housed in a 48-pin TSOP package, making it suitable for surface mount applications. The NAND512W3A2DN6E operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 50 ns, ensuring rapid data retrieval. Additionally, it supports a write cycle time of 50 ns for both word and page operations. This memory IC is verified for DigiKey programmability and is REACH unaffected, ensuring compliance with environmental regulations.

NAND512W3A2DN6E Features

  • Memory Size and Organization: The NAND512W3A2DN6E provides a substantial 512 Mbit storage capacity, organized into 64M x 8 blocks. This configuration ensures efficient data management and high-density storage.
  • Parallel Interface: The parallel memory interface enables high-speed data transfer, making it ideal for applications requiring rapid data access and processing.
  • Fast Access and Write Times: With an access time of 50 ns and a write cycle time of 50 ns for both word and page operations, the NAND512W3A2DN6E ensures quick data retrieval and efficient operations write.
  • Wide Voltage Range: The memory IC operates within a supply voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements.
  • Surface Mount Compatibility: The 48-pin TSOP package is designed for surface mount technology, facilitating easy integration into modern electronic designs.
  • DigiKey Programmability: Verified for DigiKey programmability, the NAND512W3A2DN6E ensures compatibility with DigiKey's programming services, simplifying the development process.
  • Environmental Compliance: The IC is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental standards.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the NAND512W3A2DN6E is suitable for environments with varying humidity levels, ensuring reliability and durability.

NAND512W3A2DN6E Applications

The NAND512W3A2DN6E is well-suited for a variety of applications that demand high-density, reliable, and efficient data storage. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring non-volatile memory for firmware and data storage.
  • Consumer Electronics: Suitable for consumer devices such as digital cameras, media players, and gaming consoles where fast data access and storage are crucial.
  • Industrial Applications: Applicable in industrial control systems, automation equipment, and IoT devices that require robust and reliable memory solutions.
  • Telecommunications: Used in communication devices and infrastructure where high-speed data transfer and storage are essential.
  • Automotive: Suitable for automotive applications requiring non-volatile memory for infotainment systems, telematics, and advanced driver assistance systems (ADAS).

Conclusion of NAND512W3A2DN6E

The NAND512W3A2DN6E is a versatile and high-performance Flash memory IC that offers significant advantages over similar models. Its combination of a large memory size, fast access and write times, and compatibility with surface mount technology make it an ideal choice for a wide range of applications. The NAND512W3A2DN6E's compliance with environmental regulations and its verified DigiKey programmability further enhance its appeal. Despite being marked as obsolete, this memory IC remains a reliable and efficient solution for applications requiring robust and high-density data storage.

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