Micron Technology_NAND512W3A2SNXE
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Micron Technology
NAND512W3A2SNXE

774-NAND512W3A2SNXE
IC FLASH 512MBIT PAR 48TSOP I

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP I
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NAND512W3A2SNXE Description

NAND512W3A2SNXE Description

The NAND512W3A2SNXE is a 512 Mbit Flash memory IC designed for high-performance applications requiring reliable and efficient data storage. Manufactured by Micron Technology Inc., this memory IC chip features a parallel memory interface and is organized as 64M x 8, providing robust storage capabilities in a compact 48TSOP package. The NAND512W3A2SNXE operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 50 ns, ensuring rapid data retrieval. With a write cycle time of 50 ns for both word and page operations, this IC is optimized for fast data writing processes.

NAND512W3A2SNXE Features

  • Memory Size: 512 Mbit, providing ample storage for various applications.
  • Memory Organization: 64M x 8, offering a balanced memory structure suitable for diverse data handling needs.
  • Access Time: 50 ns, ensuring quick data access and retrieval.
  • Write Cycle Time: 50 ns for both word and page operations, facilitating efficient data writing.
  • Memory Interface: Parallel, enabling straightforward integration with existing systems.
  • Supply Voltage: 2.7V to 3.6V, providing flexibility in power supply requirements.
  • Package Type: 48TSOP, offering a compact and reliable form factor.
  • Mounting Type: Surface Mount, suitable for modern PCB designs.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring durability in various environmental conditions.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting stringent environmental and safety standards.

NAND512W3A2SNXE Applications

The NAND512W3A2SNXE is ideal for applications requiring high-speed data storage and retrieval, such as:

  • Embedded Systems: Providing reliable storage for firmware and critical data in embedded devices.
  • Consumer Electronics: Enhancing the performance of devices like digital cameras, media players, and smart TVs.
  • Industrial Automation: Storing configuration data and operational parameters in industrial control systems.
  • Telecommunications: Supporting data storage needs in communication infrastructure equipment.

Conclusion of NAND512W3A2SNXE

The NAND512W3A2SNXE from Micron Technology Inc. stands out as a high-performance Flash memory IC, offering a combination of fast access times, efficient write cycles, and a robust parallel interface. Its compact 48TSOP package and surface mount design make it suitable for modern electronics, while its compliance with environmental standards ensures its suitability for a wide range of applications. Despite being marked as obsolete, the NAND512W3A2SNXE remains a reliable choice for applications requiring efficient and durable data storage solutions.

FAQ

What voltage specification is listed for NAND512W3A2SNXE?
The listed voltage-related specification for NAND512W3A2SNXE is 2.7V ~ 3.6V.
What package or case is NAND512W3A2SNXE available in?
What is NAND512W3A2SNXE?
Is NAND512W3A2SNXE currently in stock?
What operating temperature range does NAND512W3A2SNXE support?
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