Micron Technology_NAND512W3A2SZA6E
Micron Technology_NAND512W3A2SZA6E
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Micron Technology
NAND512W3A2SZA6E

774-NAND512W3A2SZA6E
IC FLASH 512MBIT PAR 63VFBGA

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ISO9001
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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
63-VFBGA (9x11)
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NAND512W3A2SZA6E Description

NAND512W3A2SZA6E Description

The NAND512W3A2SZA6E is a 512Mbit parallel Flash memory IC manufactured by Micron Technology Inc., designed for high-speed data storage and retrieval in various electronic systems. With a memory organization of 64M x 8, this device offers a substantial storage capacity for applications requiring large amounts of data. The NAND512W3A2SZA6E operates within a voltage supply range of 2.7V to 3.6V, ensuring compatibility with a wide range of power sources. This device is packaged in a 63VFBGA tray, making it suitable for surface mount applications.

NAND512W3A2SZA6E Features

  • Memory Interface: Parallel, allowing for high-speed data transfer and compatibility with various systems.
  • Memory Organization: 64M x 8, providing ample storage capacity for data-intensive applications.
  • Access Time: 50 ns, ensuring rapid data retrieval for real-time processing.
  • Write Cycle Time - Word, Page: 50 ns, enabling efficient data updates and modifications.
  • Memory Size: 512Mbit, offering substantial storage for large datasets.
  • Voltage - Supply: 2.7V ~ 3.6V, ensuring compatibility with a wide range of power sources.
  • RoHS Status: ROHS3 Compliant, adhering to environmental regulations and promoting sustainability.
  • Moisture Sensitivity Level (MSL): 3 (168 Hours), indicating the device's resistance to moisture and its suitability for various environments.

NAND512W3A2SZA6E Applications

The NAND512W3A2SZA6E is ideal for applications requiring high-speed data storage and retrieval, such as:

  1. Embedded Systems: For storing firmware, operating systems, and application data in devices like IoT devices, industrial controllers, and automotive systems.
  2. Consumer Electronics: In devices like smartphones, tablets, and digital cameras for storing user data, applications, and media files.
  3. Industrial Automation: For storing control logic, configuration settings, and operational data in industrial automation systems.
  4. Data Logging: In systems that require the logging of large amounts of data over time, such as environmental monitoring, medical equipment, and transportation systems.

Conclusion of NAND512W3A2SZA6E

The NAND512W3A2SZA6E is a high-performance, 512Mbit parallel Flash memory IC that offers a combination of large storage capacity, rapid data access, and compatibility with a wide range of power sources. Its unique features, such as a 50 ns access time and write cycle time, make it an ideal choice for applications requiring high-speed data storage and retrieval. Despite its obsolescence, this device remains a valuable option for systems that require its specific technical specifications and performance benefits.

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NAND512W3A2SZA6E is a Memory ICs Products from Micron Technology. This product page provides its main specifications, pricing information, availability, and inquiry options.
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