


Microsemi
APTGT100A120D1G
297-APTGT100A120D1G
PDF Datasheet
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, D1, 7 PIN
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Package/Case
D
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.1V
Input
Standard
Input Capacitance
7nF
Lead Free
Lead Free
Max Collector Current
150A
Max Power Dissipation
520W
APTGT100A120D1G Description
IGBT Module Trench Field Stop Half Bridge 1200 V 150 A 520 W Chassis Mount D1
FAQ
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