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APTGT200SK120D3G
297-APTGT200SK120D3G
PDF Datasheet
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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Tech Specifications
Collector Emitter Breakdown Voltage
1.2kV
Collector-emitter Voltage-Max
2.1V
Input
Standard
Input Capacitance
14nF
Max Collector Current
300A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
1.05kW
APTGT200SK120D3G Description
IGBT Module Trench Field Stop Single 1200 V 300 A 1050 W Chassis Mount D3
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