Microsemi_JAN1N6629
original

Microsemi
JAN1N6629

280-JAN1N6629
PDF Datasheet
DIODE GEN PURP 880V 1.4A AXIAL
24 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Average Rectified Current
1.4A
Package/Case
Axial
Contact Plating
Tin, Lead
Forward Current
1.4A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Repetitive Reverse Voltage (Vrrm)
880V
Max Reverse Voltage (DC)
880V
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JAN1N6629 Description

Diode 880 V 1.4A Through Hole

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