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Microsemi
JAN2N6756
278-JAN2N6756
PDF Datasheet
Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
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Tech Specifications
Continuous Drain Current (ID)
14A
Drain to Source Voltage (Vdss)
100V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
75W
Mount
Through Hole
JAN2N6756 Description
N-Channel 100 V 14A (Tc) 4W (Ta), 75W (Tc) Through Hole TO-204AA (TO-3)
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