Microsemi_JAN2N6764
Microsemi_JAN2N6764
original

Microsemi
JAN2N6764

278-JAN2N6764
PDF Datasheet
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN

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Tech Specifications

Package/Case
TO-204AE
Continuous Drain Current (ID)
38A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
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JAN2N6764 Description

N-Channel 100 V 38A (Tc) 4W (Ta), 150W (Tc) Through Hole

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JAN2N6764 is a Single FETs, MOSFETs from Microsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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