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Microsemi
JAN2N6766
278-JAN2N6766
PDF Datasheet
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN
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Tech Specifications
Package/Case
TO-204AE
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
JAN2N6766 Description
N-Channel 200 V 30A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
FAQ
What is JAN2N6766?
JAN2N6766 is a Single FETs, MOSFETs from Microsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does JAN2N6766 support?
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