Vishay / Siliconix_SI3443BDV-T1-E3
original

Vishay / Siliconix
SI3443BDV-T1-E3

278-SI3443BDV-T1-E3
PDF Datasheet
MOSFET P-CH 20V 3.6A 6TSOP
11 Weeks

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Tech Specifications

FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 4.5 V
Product Status
Active
Supplier Device Package
6-TSOP
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
1.1W (Ta)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Technology
MOSFET (Metal Oxide)
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SI3443BDV-T1-E3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SI3443BDV-T1-E3 belongs to can be classified under the Discrete Semiconductors. SI3443BDV-T1-E3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SI3443BDV-T1-E3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is SI3443BDV-T1-E3?
SI3443BDV-T1-E3 is a Single FETs, MOSFETs from Vishay / Siliconix. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is SI3443BDV-T1-E3 currently in stock?
What operating temperature range does SI3443BDV-T1-E3 support?
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