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Microsemi
JAN2N7225
285-JAN2N7225
PDF Datasheet
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
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Tech Specifications
Package/Case
TO-254-3
Continuous Drain Current (ID)
27.4A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
JAN2N7225 Description
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
FAQ
Are there related or alternative parts for JAN2N7225?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does JAN2N7225 support?
What is the mounting type of JAN2N7225?
What is JAN2N7225?
What voltage specification is listed for JAN2N7225?
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