Microsemi_JAN2N7334
Microsemi_JAN2N7334
original

Microsemi
JAN2N7334

289-JAN2N7334
PDF Datasheet
MOSFET 4N-CH 100V 1A MO-036AB

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Tech Specifications

Package/Case
DIP
Continuous Drain Current (ID)
1A
Drain to Source Voltage (Vdss)
100V
FET Type
4 N-Channel
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Through Hole
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JAN2N7334 Description

Mosfet Array 100V 1A 1.4W Through Hole MO-036AB

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JAN2N7334 is available in the DIP package / case.
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