


Microsemi
JAN2N918UB
2087-JAN2N918UB
PDF Datasheet
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3
22 Weeks
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Responsible qualityTech Specifications
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
15V
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin, Lead
Max Collector Current
50mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
JAN2N918UB Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3
FAQ
What voltage specification is listed for JAN2N918UB?
The listed voltage-related specification for JAN2N918UB is 30V.
What package or case is JAN2N918UB available in?
What is the standard lead time for JAN2N918UB?
What operating temperature range does JAN2N918UB support?
What is JAN2N918UB?



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