Microsemi_JAN2N918UB
Microsemi_JAN2N918UB
original

Microsemi
JAN2N918UB

2087-JAN2N918UB
PDF Datasheet
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3
22 Weeks

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ISO9001
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Tech Specifications

Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
15V
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin, Lead
Max Collector Current
50mA
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
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JAN2N918UB Description

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3

FAQ

What voltage specification is listed for JAN2N918UB?
The listed voltage-related specification for JAN2N918UB is 30V.
What package or case is JAN2N918UB available in?
What is the standard lead time for JAN2N918UB?
What operating temperature range does JAN2N918UB support?
What is JAN2N918UB?
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