onsemi_MUN5213DW1T1G
original

onsemi
MUN5213DW1T1G

293-MUN5213DW1T1G
PDF Datasheet
NPN Digital BJT Transistor 50V 100mA SOT-363-6 T/R
9 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
Halogen Free
Halogen Free
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MUN5213DW1T1G Description

MUN5213DW1T1G Description

The MUN5213DW1T1G is a Bipolar Transistor Array manufactured by onsemi. This pre-biased 2NPN transistor is designed for high performance in a variety of applications. With a maximum collector current of 100mA, a saturation voltage of 250mV at 300µA and 10mA, and a maximum breakdown voltage of 50V, this device offers excellent performance and reliability.

MUN5213DW1T1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100mA
    • Base Resistor (R1): 47kOhms
    • Emitter Base Resistor (R2): 47kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Maximum Voltage - Collector Emitter Breakdown: 50V
    • Maximum Power: 250mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Maximum Collector Cutoff Current: 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface Mount technology for compact design and easy integration
    • Active product status ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 compliant for environmental and regulatory compliance
    • EAR99 and HTSUS codes for easy international trade and logistics

MUN5213DW1T1G Applications

The MUN5213DW1T1G is ideal for a variety of applications due to its high performance and reliability. Some specific use cases include:

  • Audio Amplifiers: The pre-biased design and high current gain make it suitable for audio amplification tasks.
  • Signal Processing: Its low saturation voltage and high breakdown voltage make it ideal for signal processing applications.
  • Power Management: The device's ability to handle up to 250mW of power makes it suitable for power management circuits.
  • Communication Systems: Its compact size and surface mount technology make it ideal for communication systems where space is at a premium.

Conclusion of MUN5213DW1T1G

The MUN5213DW1T1G is a high-performance Bipolar Transistor Array from onsemi. Its unique features, such as pre-biased design, high current gain, and low saturation voltage, make it an excellent choice for a variety of applications. Its compact size, surface mount technology, and regulatory compliance further enhance its appeal. With ongoing support and availability, the MUN5213DW1T1G is a reliable choice for your next project.

FAQ

Is MUN5213DW1T1G currently in stock?
Yes. MUN5213DW1T1G currently shows 851 unit(s) in stock.
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Availability (In Stock : 851 )
Quantity Unit Price Ext. Price
100+ $0.04793 $4.79
300+ $0.04241 $12.72
3000+ $0.03828 $114.84
6000+ $0.03497 $209.82
9000+ $0.03332 $299.88
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