onsemi_NSVMUN5113DW1T3G
original

onsemi
NSVMUN5113DW1T3G

293-NSVMUN5113DW1T3G
PDF Datasheet
Dual PNP Bipolar Digital Transistor (BRT), 10000-REEL
12 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
250mW
Mount
Surface Mount
Packaging
Tape and Reel
RoHS Compliant
Yes
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NSVMUN5113DW1T3G Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

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