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NSVMUN5211DW1T3G
293-NSVMUN5211DW1T3G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), 10000-REEL
8 Weeks
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Responsible qualityTech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
250mW
Mount
Surface Mount
Packaging
Tape and Reel
NSVMUN5211DW1T3G Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
FAQ
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Yes. NSVMUN5211DW1T3G currently shows 9842 unit(s) in stock.
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