onsemi_NSVMUN5314DW1T3G
original

onsemi
NSVMUN5314DW1T3G

293-NSVMUN5314DW1T3G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), 10000-REEL
10 Weeks

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Tech Specifications

Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Collector Current
100mA
Max Power Dissipation
250mW
Mount
Surface Mount
Packaging
Tape and Reel
RoHS Compliant
Yes
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NSVMUN5314DW1T3G Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

FAQ

What voltage specification is listed for NSVMUN5314DW1T3G?
The listed voltage-related specification for NSVMUN5314DW1T3G is 50V.
What is NSVMUN5314DW1T3G?
What is the mounting type of NSVMUN5314DW1T3G?
Is NSVMUN5314DW1T3G currently in stock?
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