onsemi_NSVMUN5215DW1T1G
original

onsemi
NSVMUN5215DW1T1G

293-NSVMUN5215DW1T1G
PDF Datasheet
Dual NPN Bipolar Digital Transistor (BRT), 3000-REEL
9 Weeks

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ISO9001
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Tech Specifications

Package/Case
SOT-363
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
250mW
Mount
Surface Mount
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NSVMUN5215DW1T1G Description

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363

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