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NSVEMC2DXV5T1G
293-NSVEMC2DXV5T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
6 Weeks
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Package/Case
SOT-553
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
500mW
Mount
Surface Mount
NSVEMC2DXV5T1G Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) 50V 100mA 500mW Surface Mount SOT-553
FAQ
Are there related or alternative parts for NSVEMC2DXV5T1G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the standard lead time for NSVEMC2DXV5T1G?
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