onsemi_NSVEMC2DXV5T1G
original

onsemi
NSVEMC2DXV5T1G

293-NSVEMC2DXV5T1G
PDF Datasheet
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
6 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Package/Case
SOT-553
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
500mW
Mount
Surface Mount
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NSVEMC2DXV5T1G Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) 50V 100mA 500mW Surface Mount SOT-553

FAQ

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