German
Japanese
Portuguese
Korea
Mexico
Dutch
Microsemi
JANTX2N6770
278-JANTX2N6770
PDF Datasheet
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-204AE
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
500V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
JANTX2N6770 Description
N-Channel 500 V 12A (Tc) 4W (Ta), 150W (Tc) Through Hole TO-3
FAQ
What package or case is JANTX2N6770 available in?
JANTX2N6770 is available in the TO-204AE package / case.
What is the mounting type of JANTX2N6770?
What is JANTX2N6770?
Is JANTX2N6770 currently in stock?
Are there related or alternative parts for JANTX2N6770?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
