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UTV8100B
283-UTV8100B
PDF Datasheet
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 55RT, 4 PIN
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Tech Specifications
Collector Base Voltage (VCBO)
65V
Collector Emitter Breakdown Voltage
60V
Gain
9.5dB
Max Collector Current
15A
Max Frequency
860MHz
Max Operating Temperature
200°C
Min Operating Temperature
-40°C
Max Power Dissipation
290W
UTV8100B Description
RF Transistor NPN 60V 15A 470MHz ~ 860MHz 290W Chassis Mount 55RT
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is UTV8100B?
What voltage specification is listed for UTV8100B?
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