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Monolithic Power Systems
LN60A01EP-LF
289-LN60A01EP-LF
PDF Datasheet
Small Signal Field-Effect Transistor, 0.08A I(D), 600V, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, DIP-8
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Tech Specifications
Package/Case
DIP
Continuous Drain Current (ID)
80mA
Drain to Source Voltage (Vdss)
600V
FET Type
3 N-Channel
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-20°C
Max Power Dissipation
1.3W
LN60A01EP-LF Description
Mosfet Array 600V 80mA 1.3W Through Hole 8-PDIP-7B
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