NXP Semiconductors
BFU520WF

283-BFU520WF
PDF Datasheet
RF TRANS NPN 12V 10GHZ SOT323-3
13 Weeks

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Tech Specifications

Configuration
Single
Maximum Power 1dB Compression (dBm)
8.5(Typ)
Typical Power Gain (dB)
24
PPAP
Yes
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
12V
Automotive
Yes
Maximum 3rd Order Intercept Point (dBm)
18(Typ)
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BFU520WF Description

BFU520WF Description

The BFU520WF from NXP Semiconductors is a high-performance NPN bipolar RF transistor designed for low-noise amplification (LNA) and RF signal processing in high-frequency applications. Packaged in a compact SOT323-3 surface-mount form factor, it operates at a transition frequency (fT) of 10GHz, making it ideal for microwave and RF circuits. With a collector-emitter breakdown voltage of 12V and a maximum collector current (Ic) of 30mA, it balances power handling and efficiency. The transistor is RoHS3 compliant, REACH unaffected, and features a moisture sensitivity level (MSL) of 1, ensuring reliability in harsh environments.

BFU520WF Features

  • Low Noise Figure: 1dB @ 1.8GHz, enabling superior signal clarity in sensitive RF applications.
  • High Gain: 13dB amplification for robust signal strength in receiver chains.
  • Broadband Performance: Optimized for frequencies up to 10GHz, suitable for 5G, Wi-Fi 6, and satellite communications.
  • Power Efficiency: 450mW max power dissipation with a DC current gain (hFE) of 60 @ 5mA, 8V, ensuring energy-efficient operation.
  • Surface-Mount Design: Tape & Reel (TR) packaging for automated assembly, reducing production costs.

BFU520WF Applications

  • Wireless Infrastructure: LNA stages in base stations, repeaters, and small-cell networks.
  • Consumer Electronics: RF front-end modules for smartphones, IoT devices, and wearables.
  • Test & Measurement: Signal generators and spectrum analyzers requiring low-noise amplification.
  • Satellite & Radar Systems: High-frequency signal processing in aerospace and defense applications.

Conclusion of BFU520WF

The BFU520WF stands out as a high-frequency, low-noise NPN transistor with exceptional gain and broadband capabilities. Its compact SOT323-3 package, low power consumption, and compliance with environmental standards make it a versatile choice for modern RF designs. Whether for 5G infrastructure, IoT connectivity, or aerospace systems, this transistor delivers reliable performance in demanding applications. Engineers seeking a cost-effective, high-performance RF solution will find the BFU520WF an optimal fit.

FAQ

What operating temperature range does BFU520WF support?
BFU520WF has an operating temperature range of -40°C ~ 150°C (TJ).
What voltage specification is listed for BFU520WF?
Are there related or alternative parts for BFU520WF?
What is the standard lead time for BFU520WF?
What is the mounting type of BFU520WF?
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