onsemi_NSS40201LT1G

onsemi
NSS40201LT1G  
Single Bipolar Transistors

onsemi
NSS40201LT1G
276-NSS40201LT1G
Ersa
onsemi-NSS40201LT1G-datasheets-7003974.pdf
TRANS NPN 40V 2A SOT23-3
In Stock : 239866

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NSS40201LT1G Description

NSS40201LT1G Description

The NSS40201LT1G is a high-performance NPN bipolar transistor offered by onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 2A, this device delivers outstanding performance and reliability. The SOT23-3 package ensures a compact and efficient design, making it suitable for surface-mount applications.

NSS40201LT1G Features

  • 150MHz Frequency - Transition: The NSS40201LT1G boasts a high transition frequency of 150MHz, making it ideal for high-speed switching applications.
  • 2A Collector Current (Ic): This device can handle a maximum collector current of 2A, providing ample power for various applications.
  • 115mV Vce Saturation (Max) @ Ib, Ic: The low saturation voltage of 115mV at 200mA and 2A ensures efficient operation and minimal power loss.
  • 40V Collector-Emitter Breakdown Voltage: This high breakdown voltage allows the NSS40201LT1G to operate in demanding environments with high voltage requirements.
  • 460mW Maximum Power: The device can handle up to 460mW of power, making it suitable for a variety of power applications.
  • 200 Minimum DC Current Gain (hFE): The minimum gain of 200 at 500mA and 2V ensures consistent performance across different operating conditions.
  • Surface Mount Technology: The SOT23-3 package allows for efficient and compact surface-mount applications, reducing overall footprint and improving reliability.

NSS40201LT1G Applications

The NSS40201LT1G is an ideal choice for various applications, including:

  1. Audio Amplifiers: The high gain and low saturation voltage make it suitable for audio amplification applications.
  2. Switching Regulators: The high transition frequency and low saturation voltage make it an excellent choice for switching regulators.
  3. Motor Control: The high current and power handling capabilities make it suitable for motor control applications.
  4. RF Amplifiers: The high transition frequency and low noise characteristics make it ideal for RF amplification applications.

Conclusion of NSS40201LT1G

The NSS40201LT1G from onsemi is a versatile and high-performance NPN bipolar transistor that offers a unique combination of high frequency, low saturation voltage, and high power handling capabilities. Its compact SOT23-3 package and surface-mount technology make it an ideal choice for a wide range of applications in the electronics industry. With its impressive technical specifications and performance benefits, the NSS40201LT1G stands out as a superior option over similar models, providing reliable and efficient operation in demanding environments.

Tech Specifications

Unit Weight
Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
f T Min (MHz)
Automotive
RoHS
Supplier Package
Transistor Type
Package / Case
Technology
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
Collector- Base Voltage VCBO
h FE Min
V EBO (V)
EU RoHS
MSL Temp (°C)
Moisture Sensitivity Level (MSL)
Status
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
I C Cont. (A)
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
MSL Type
Pin Count
Mounting
Lead Shape
Collector- Emitter Voltage VCEO Max
HTSUS
Package
V CEO Min (V)
USHTS
V CE(sat) Max (V)
Category
Case Outline
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
V BE(on) (V)
ECCN (US)
Maximum Power Dissipation (mW)
V BE(sat) (V)
V CBO (V)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Maximum DC Collector Current
Package Height
Collector-Emitter Saturation Voltage
Mfr
Polarity
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
RoHS Status
Mounting Style
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Transistor Polarity
Package Length
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Length
Gain Bandwidth Product fT
Power - Max
Part Status
P TM Max (W)
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
Pd - Power Dissipation
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number

NSS40201LT1G Documents

Download datasheets and manufacturer documentation for NSS40201LT1G

Ersa Mult Dev Assembly 15/Dec/2023      
Ersa NSS,NSV40201LT1G      
Ersa NSS,NSV40201LT1G      
Ersa SOT23 16/Sep/2016      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NSS40201LT1G      

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