NXP Semiconductors_MRF13750HR5
original

NXP Semiconductors
MRF13750HR5

285-MRF13750HR5
PDF Datasheet
RF MOSFET LDMOS 50V NI1230
12 Weeks

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Tech Specifications

Typical Output Capacitance @ Vds (pF)
63.8@50V
Configuration
Dual
Maximum Gate Source Leakage Current (nA)
1000
Typical Power Gain (dB)
20.4
PPAP
No
Voltage - Rated
105 V
Channel Mode
Enhancement
Product Status
Active
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MRF13750HR5 Description

MRF13750HR5 Description

The MRF13750HR5 from NXP Semiconductors is a high-performance LDMOS RF MOSFET designed for demanding RF power amplification applications. Operating within a frequency range of 700MHz to 1.3GHz, this dual-configuration device delivers an impressive output power of 650W at 50V test voltage, making it ideal for high-power RF systems. With a current rating of 10µA and a rated voltage of 105V, it ensures reliable performance under stringent conditions. Packaged in Tape & Reel (TR) for automated assembly, the MRF13750HR5 is ROHS3 compliant and REACH unaffected, meeting global environmental standards.

MRF13750HR5 Features

  • High Power Output: Delivers 650W of RF power, suitable for high-performance amplification.
  • Wide Frequency Range: Covers 700MHz to 1.3GHz, offering versatility for diverse RF applications.
  • LDMOS Technology: Ensures high efficiency, linearity, and thermal stability, outperforming traditional MOSFETs.
  • High Gain: 20.6dB gain enhances signal amplification with minimal noise.
  • Robust Construction: Chassis mount design ensures durability in harsh environments.
  • Compliance: ROHS3 compliant, EAR99 ECCN, and REACH unaffected, ensuring global regulatory adherence.

MRF13750HR5 Applications

The MRF13750HR5 excels in high-power RF amplification, making it ideal for:

  • Broadcast Equipment: High-power transmitters for TV and radio broadcasting.
  • Industrial RF Systems: Plasma generators, medical diathermy, and RF heating.
  • Military & Aerospace: Radar systems and communication infrastructure requiring robust performance.
  • Amateur Radio: High-power amplifiers for long-range communication.
  • Cellular Infrastructure: Base station amplifiers for 4G/LTE and emerging 5G networks.

Conclusion of MRF13750HR5

The MRF13750HR5 stands out as a high-efficiency, high-power RF MOSFET with LDMOS technology, offering superior performance in demanding applications. Its wide frequency range, high gain, and compliance with environmental standards make it a preferred choice for broadcast, industrial, and military systems. For engineers seeking reliability, power, and versatility, the MRF13750HR5 is a top-tier solution in the RF power amplification landscape.

FAQ

Are there related or alternative parts for MRF13750HR5?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does MRF13750HR5 support?
What is the mounting type of MRF13750HR5?
What is the standard lead time for MRF13750HR5?
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