ROHM Semiconductor_IMZ4T108
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ROHM Semiconductor
IMZ4T108

277-IMZ4T108
TRANS NPN/PNP 32V 0.5A 6SMT
13 Weeks

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Tech Specifications

Operating Temperature
150°C (TJ)
Frequency - Transition
250MHz, 200MHz
Current - Collector (Ic) (Max)
500mA
Vce Saturation (Max) @ Ib, Ic
600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Not For New Designs
Voltage - Collector Emitter Breakdown (Max)
32V
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IMZ4T108 Description

IMZ4T108 Description

The IMZ4T108 is a Bipolar Transistor Array manufactured by ROHM Semiconductor. This NPN/PNP transistor array is designed for high-performance applications, offering a range of technical specifications that make it suitable for various electronic devices. With a maximum collector-emitter breakdown voltage of 32V, a maximum collector current of 500mA, and a maximum power dissipation of 300mW, the IMZ4T108 is a robust and reliable choice for your electronic design needs.

IMZ4T108 Features

  • Operating Temperature: The IMZ4T108 can operate at a junction temperature of up to 150°C, making it suitable for high-temperature applications.
  • Frequency - Transition: With a transition frequency of 250MHz and 200MHz, the IMZ4T108 offers excellent high-frequency performance.
  • Current - Collector (Ic) (Max): The maximum collector current is 500mA, providing ample current for most applications.
  • Vce Saturation (Max) @ Ib, Ic: The IMZ4T108 has a low saturation voltage, with a maximum of 600mV at 50mA and 500mA, and 600mV at 30mA and 300mA.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: The minimum current gain is 120 at 100mA and 3V, ensuring consistent performance.
  • Mounting Type: The IMZ4T108 is surface mount, making it easy to integrate into your design.
  • Supplier Device Package: The device is available in an SMT6 package, which is compact and space-saving.
  • RoHS Status: The IMZ4T108 is ROHS3 compliant, making it an environmentally friendly choice.

IMZ4T108 Applications

The IMZ4T108 is ideal for a variety of applications due to its high performance and versatility. Some specific use cases include:

  1. Power Amplifiers: The high current and power ratings make the IMZ4T108 suitable for power amplifier applications.
  2. Switching Applications: The low saturation voltage and high transition frequency make it ideal for switching applications.
  3. Automotive Electronics: The high operating temperature and robust performance make the IMZ4T108 suitable for automotive electronics.
  4. Industrial Control Systems: The IMZ4T108's high voltage and current ratings make it suitable for industrial control systems.

Conclusion of IMZ4T108

The IMZ4T108 is a high-performance Bipolar Transistor Array from ROHM Semiconductor. Its unique combination of high current, power, and frequency capabilities, along with its compact SMT6 package, make it an excellent choice for a wide range of electronic applications. While it is not recommended for new designs, the IMZ4T108 remains a reliable and robust option for existing designs that require its specific performance characteristics.

FAQ

What is the mounting type of IMZ4T108?
IMZ4T108 uses a Surface Mount mounting style based on the listed product specifications.
Is IMZ4T108 currently in stock?
What operating temperature range does IMZ4T108 support?
What is the standard lead time for IMZ4T108?
What package or case is IMZ4T108 available in?
Availability (In Stock : 82 )
Quantity Unit Price Ext. Price
5+ $0.09257 $0.46
50+ $0.07352 $3.68
150+ $0.06400 $9.60
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