onsemi
2SA1419S-TD-E  
Single Bipolar Transistors

onsemi
2SA1419S-TD-E
276-2SA1419S-TD-E
TRANS PNP 160V 1.5A PCP
In Stock : 5458

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2SA1419S-TD-E Description

2SA1419S-TD-E Description

The 2SA1419S-TD-E is a high-performance PNP single bipolar transistor designed and manufactured by onsemi. This device is known for its robustness and reliability, making it a popular choice in various electronic applications. With an operating temperature range of 150°C (TJ) and a maximum collector-emitter breakdown voltage of 160V, the 2SA1419S-TD-E is capable of withstanding high-voltage and high-temperature environments. Its maximum collector current (Ic) is 1.5A, and it can handle a maximum power dissipation of 500mW, making it suitable for high-current applications. The device is mounted on a surface mount package and is available in a tape & reel packaging for easy integration into automated assembly lines.

2SA1419S-TD-E Features

  • PNP Transistor Type: The 2SA1419S-TD-E is a PNP transistor, which is ideal for applications requiring high voltage and current handling capabilities.
  • High Operating Temperature: With an operating temperature of 150°C (TJ), this device can be used in high-temperature environments without compromising performance.
  • High Voltage and Current Ratings: The 2SA1419S-TD-E can handle a maximum collector-emitter breakdown voltage of 160V and a maximum collector current of 1.5A, making it suitable for high-voltage and high-current applications.
  • Low Vce Saturation: The device has a low Vce saturation of 500mV @ 50mA, 500mA, which ensures efficient operation and low power consumption.
  • Surface Mount Package: The 2SA1419S-TD-E is mounted on a surface mount package, which allows for easy integration into automated assembly lines and compact designs.
  • Compliance with RoHS and REACH: This device is compliant with RoHS3 and REACH regulations, making it an environmentally friendly choice for electronic applications.

2SA1419S-TD-E Applications

The 2SA1419S-TD-E is ideal for a wide range of applications due to its high voltage and current handling capabilities, low Vce saturation, and high operating temperature. Some specific use cases include:

  1. Power Amplifiers: The high voltage and current ratings make the 2SA1419S-TD-E suitable for use in power amplifiers, where high power dissipation and voltage handling are required.
  2. Switching Applications: The low Vce saturation of the 2SA1419S-TD-E makes it an excellent choice for switching applications, where low power consumption and efficient operation are crucial.
  3. Automotive Electronics: The high operating temperature and robustness of the 2SA1419S-TD-E make it suitable for use in automotive electronics, where high-temperature and harsh environmental conditions are common.
  4. Industrial Control Systems: The 2SA1419S-TD-E can be used in industrial control systems, where high voltage and current handling capabilities are required for reliable operation.

Conclusion of 2SA1419S-TD-E

The 2SA1419S-TD-E is a high-performance PNP single bipolar transistor that offers a unique combination of high voltage and current handling capabilities, low Vce saturation, and high operating temperature. Its surface mount package and compliance with RoHS and REACH regulations make it an ideal choice for a wide range of applications, including power amplifiers, switching applications, automotive electronics, and industrial control systems. With its robust performance and reliability, the 2SA1419S-TD-E is a valuable addition to any electronic design.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
Pd - Power Dissipation
USHTS

2SA1419S-TD-E Documents

Download datasheets and manufacturer documentation for 2SA1419S-TD-E

Ersa 2SA1419/2SC3649      
Ersa 2SA1419/2SC3649      
Ersa onsemi RoHS       onsemi REACH       Material Declaration 2SA1419S-TD-E      

Shopping Guide

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