onsemi_BC858CLT3G
original

onsemi
BC858CLT3G

276-BC858CLT3G
PDF Datasheet
PNP BJT Transistor, 30V VCEO, 100mA IC, 100MHz, SOT-23
6 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
-30V
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
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BC858CLT3G Description

BC858CLT3G Description

The BC858CLT3G is a PNP single bipolar transistor offered by onsemi, designed for a wide range of applications in the electronics industry. This high-performance device boasts a frequency transition of 100MHz, making it suitable for high-speed applications. With a maximum collector current (Ic) of 100mA and a Vce saturation of 650mV at 5mA and 100mA, the BC858CLT3G delivers excellent performance in various electronic circuits. The device is rated for a maximum power dissipation of 300mW and a collector-emitter breakdown voltage of 30V, ensuring reliable operation in demanding environments.

BC858CLT3G Features

  • PNP Transistor Type: The BC858CLT3G is a PNP transistor, making it ideal for applications requiring amplification and switching in low-voltage circuits.
  • High Frequency Transition: With a frequency transition of 100MHz, the BC858CLT3G is well-suited for high-speed applications, such as digital circuits and communication systems.
  • Low Vce Saturation: The low Vce saturation of 650mV at 5mA and 100mA ensures efficient operation and low power consumption in saturation mode.
  • Surface Mount Package: The BC858CLT3G is available in a surface-mount package, making it easy to integrate into modern electronic designs.
  • RoHS Compliance: This device is compliant with the RoHS3 standard, making it suitable for environmentally friendly applications.
  • REACH Unaffected: The BC858CLT3G is not affected by the REACH regulation, ensuring uninterrupted supply and availability.

BC858CLT3G Applications

The BC858CLT3G is an ideal choice for various applications in the electronics industry, including:

  1. Amplification: Due to its high-frequency transition and low Vce saturation, the BC858CLT3G is suitable for use in amplifier circuits, such as audio amplifiers and signal conditioning circuits.
  2. Switching: The PNP transistor type and low Vce saturation make the BC858CLT3G an excellent choice for switching applications, including power switching and motor control.
  3. Communication Systems: The high-frequency transition capability of the BC858CLT3G makes it suitable for use in communication systems, such as radio frequency (RF) amplifiers and mixers.
  4. Automotive Applications: The BC858CLT3G can be used in automotive applications, such as engine control units (ECUs) and sensor interfaces, due to its ability to handle high voltages and currents.

Conclusion of BC858CLT3G

In conclusion, the BC858CLT3G is a versatile and high-performance PNP single bipolar transistor from onsemi. Its unique combination of high-frequency transition, low Vce saturation, and compliance with industry standards make it an ideal choice for a wide range of applications in the electronics industry. With its excellent performance and reliability, the BC858CLT3G is a valuable addition to any electronic design.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 1808 )
Quantity Unit Price Ext. Price
10+ $0.06139 $0.61
100+ $0.04901 $4.90
300+ $0.04284 $12.85
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