onsemi_FDA24N50F

onsemi
FDA24N50F  
Single FETs, MOSFETs

onsemi
FDA24N50F
278-FDA24N50F
Ersa
onsemi-FDA24N50F-datasheets-3383632.pdf
MOSFET N-CH 500V 24A TO3PN
In Stock : 618

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FDA24N50F Description

FDA24N50F Description

The FDA24N50F is a high-performance N-Channel MOSFET from onsemi, designed for a wide range of applications requiring high voltage and current capabilities. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 24A at 25°C, this device offers excellent electrical performance and reliability. The FDA24N50F features a low on-resistance (Rds On) of 200mOhm at 12A and 10V, ensuring efficient power dissipation and minimal power loss. The device is housed in a through-hole TO3PN package, making it suitable for various mounting options.

FDA24N50F Features

  • N-Channel MOSFET with 500V drain-to-source voltage (Vdss)
  • Continuous drain current (Id) of 24A at 25°C
  • Low on-resistance (Rds On) of 200mOhm at 12A and 10V
  • Maximum gate-source voltage (Vgs) of ±30V
  • Maximum gate charge (Qg) of 85nC at 10V
  • Maximum input capacitance (Ciss) of 4310pF at 25V
  • Maximum power dissipation of 270W (Tc)
  • RoHS3 compliant and REACH unaffected
  • Moisture sensitivity level (MSL) not applicable
  • Drive voltage (Max Rds On, Min Rds On) of 10V
  • Vgs(th) (Max) of 5V at 250µA

FDA24N50F Applications

The FDA24N50F is ideal for applications requiring high voltage and current handling capabilities, such as:

  1. Power switching and control in industrial and automotive systems
  2. Motor drives and control circuits
  3. High-voltage power supplies and converters
  4. Battery management systems and chargers
  5. Renewable energy systems, such as solar inverters and wind power converters

Conclusion of FDA24N50F

The FDA24N50F from onsemi is a robust and reliable N-Channel MOSFET, offering excellent electrical performance and versatility for a wide range of high-voltage and high-current applications. Its low on-resistance, high voltage and current ratings, and compliance with industry standards make it an ideal choice for demanding power electronics applications. With its unique features and advantages over similar models, the FDA24N50F stands out as a preferred solution for engineers and designers in the electronics industry.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Package Length
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Package Width
Typical Gate Charge @ Vgs (nC)

FDA24N50F Documents

Download datasheets and manufacturer documentation for FDA24N50F

Ersa Mult Dev 03/Nov/2023      
Ersa FDA24N50F      
Ersa Mult Devices 24/Oct/2017       Packing quantity increase 28/Dec/2020      
Ersa Dimension/Color Change 24/Feb/2021       Postponed Qualification 27/Dec/2022      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDA24N50F      

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