The FDB1D7N10CL7 is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in high voltage applications, such as power electronics and motor control.
Description:
The FDB1D7N10CL7 is an N-channel MOSFET with a drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 7.3A. It has a low on-state resistance (Rds(on)) of 5.3mΩ, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a gate charge (Qg) of 52nC and a typical switching time of 110ns.
Features:
- High voltage operation: The FDB1D7N10CL7 is designed to operate at high voltages, making it suitable for use in power electronics and motor control applications.
- Low on-state resistance: The low Rds(on) of the FDB1D7N10CL7 helps to minimize power dissipation and improve efficiency in high current applications.
- Fast switching speed: The FDB1D7N10CL7 has a fast switching speed, which makes it suitable for use in high frequency applications.
- High input impedance: The high input impedance of the FDB1D7N10CL7 allows it to be driven by a wide range of gate drive circuits.
Applications:
The FDB1D7N10CL7 is commonly used in a variety of high voltage applications, including:
- Power electronics: The FDB1D7N10CL7 is often used in power electronics applications such as DC-DC converters and motor controllers.
- Motor control: The FDB1D7N10CL7 is well-suited for use in motor control applications, such as brushless DC motor controllers and AC motor controllers.
- Industrial control: The FDB1D7N10CL7 is often used in industrial control applications, such as robotics and automation systems.
- Renewable energy: The FDB1D7N10CL7 is also used in renewable energy applications, such as solar inverters and wind turbine converters.
Overall, the FDB1D7N10CL7 is a high voltage MOSFET that offers high efficiency, fast switching speed, and high input impedance, making it well-suited for a wide range of high voltage applications.