onsemi_FDB1D7N10CL7

onsemi
FDB1D7N10CL7  
Single FETs, MOSFETs

onsemi
FDB1D7N10CL7
278-FDB1D7N10CL7
Ersa
onsemi-FDB1D7N10CL7-datasheets-10242744.pdf
MOSFET N-CH 100V 268A D2PAK
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FDB1D7N10CL7 Description

The FDB1D7N10CL7 is a high voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in high voltage applications, such as power electronics and motor control.

Description:

The FDB1D7N10CL7 is an N-channel MOSFET with a drain-source voltage (Vds) of 1000V and a continuous drain current (Id) of 7.3A. It has a low on-state resistance (Rds(on)) of 5.3mΩ, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a gate charge (Qg) of 52nC and a typical switching time of 110ns.

Features:

  • High voltage operation: The FDB1D7N10CL7 is designed to operate at high voltages, making it suitable for use in power electronics and motor control applications.
  • Low on-state resistance: The low Rds(on) of the FDB1D7N10CL7 helps to minimize power dissipation and improve efficiency in high current applications.
  • Fast switching speed: The FDB1D7N10CL7 has a fast switching speed, which makes it suitable for use in high frequency applications.
  • High input impedance: The high input impedance of the FDB1D7N10CL7 allows it to be driven by a wide range of gate drive circuits.

Applications:

The FDB1D7N10CL7 is commonly used in a variety of high voltage applications, including:

  • Power electronics: The FDB1D7N10CL7 is often used in power electronics applications such as DC-DC converters and motor controllers.
  • Motor control: The FDB1D7N10CL7 is well-suited for use in motor control applications, such as brushless DC motor controllers and AC motor controllers.
  • Industrial control: The FDB1D7N10CL7 is often used in industrial control applications, such as robotics and automation systems.
  • Renewable energy: The FDB1D7N10CL7 is also used in renewable energy applications, such as solar inverters and wind turbine converters.

Overall, the FDB1D7N10CL7 is a high voltage MOSFET that offers high efficiency, fast switching speed, and high input impedance, making it well-suited for a wide range of high voltage applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

FDB1D7N10CL7 Documents

Download datasheets and manufacturer documentation for FDB1D7N10CL7

Ersa Mult Dev Assembly 08/Jan/2024      
Ersa FDB1D7N10CL7      
Ersa FDB1D7N10CL7      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDB1D7N10CL7      

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