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FDB8896 Description
FDB8896 Description
The FDB8896 is a high-performance N-Channel MOSFET from onsemi, designed for power applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 19A at 25°C and 93A at case temperature (Tc), this MOSFET is capable of handling demanding power requirements. The device features a low on-resistance (Rds On) of 5.7mOhm at 35A and 10V Vgs, ensuring minimal power dissipation and high efficiency. The FDB8896 is also designed for surface mount applications, making it suitable for compact and space-constrained designs.
FDB8896 Features
- PowerTrench® technology for improved performance and reliability
- Low Rds On of 5.7mOhm at 35A and 10V Vgs for high efficiency
- Continuous drain current of 19A at 25°C and 93A at case temperature (Tc)
- Drain-to-source voltage (Vdss) of 30V
- Gate charge (Qg) of 67nC at 10V Vgs for fast switching
- Input capacitance (Ciss) of 2525pF at 15V Vds for low parasitic capacitance
- Drive voltage range of 4.5V to 10V for compatibility with various gate drivers
- Moisture sensitivity level (MSL) of 1, allowing for unlimited storage time
- RoHS3 compliant and REACH unaffected, ensuring environmental compliance
- EAR99 ECCN for export control classification
FDB8896 Applications
The FDB8896 is ideal for a variety of power applications, including:
- Power supplies and converters
- Motor control and drives
- Automotive electronics
- Industrial control systems
- Renewable energy systems, such as solar inverters and wind power converters
Conclusion of FDB8896
The FDB8896 is a versatile and high-performance N-Channel MOSFET from onsemi, offering a combination of low on-resistance, high current handling capability, and fast switching speeds. Its PowerTrench® technology and low gate charge make it an excellent choice for power applications requiring high efficiency and reliability. While the device is now considered obsolete, it remains a popular choice for applications where its unique features and advantages over similar models are required.



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