onsemi

FDC3512

The FDC3512 is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

Description:

The FDC3512 is an N-channel MOSFET with a breakdown voltage (V(DSS)) of 100V and a continuous drain current (I(D)) of 4.5A at 25°C. It has a low on-state resistance (R(DS(on))) of 4.5mΩ maximum at a gate-source voltage (V(GS)) of 10V, making it suitable for use in high-efficiency power conversion applications.

Features:

• High breakdown voltage (V(DSS)) of 100V
• Continuous drain current (I(D)) of 4.5A at 25°C
• Low on-state resistance (R(DS(on))) of 4.5mΩ maximum at V(GS) of 10V
• Suitable for use in high-efficiency power conversion applications
• Designed for use in motor control, power supplies, and power conversion systems

Applications:

• Motor control
• Power supplies
• Power conversion systems
• High-efficiency power conversion applications

Overall, the FDC3512 is a high-voltage, high-power MOSFET that offers high efficiency and low on-state resistance, making it an ideal choice for a variety of power conversion applications.