onsemi_FDC606P

onsemi
FDC606P  
Single FETs, MOSFETs

onsemi
FDC606P
278-FDC606P
Ersa
onsemi-FDC606P-datasheets-6907498.pdf
MOSFET P-CH 12V 6A SUPERSOT6
In Stock : 3004

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FDC606P Description

The FDC606P is a high-power, low-side current sensing power MOSFET driver from ON Semiconductor. It is designed to provide efficient and accurate current sensing in a wide range of power applications, including motor control, power supplies, and battery management systems.

Description:

The FDC606P is a monolithic integrated circuit that combines a high-side and low-side MOSFET driver with a precision current sense amplifier. It is available in a compact SOIC-8 package, making it suitable for space-constrained applications.

Features:

  1. High-Side and Low-Side MOSFET Drivers: The FDC606P features both high-side and low-side MOSFET drivers, allowing for efficient control of power MOSFETs in a variety of applications.
  2. Precision Current Sensing: The device includes a precision current sense amplifier that provides accurate current sensing over a wide range of input currents.
  3. Wide Input Voltage Range: The FDC606P can operate from an input voltage range of 4.75V to 28V, making it suitable for a variety of power supply voltages.
  4. Overcurrent Protection: The device includes overcurrent protection to protect the power MOSFETs from damage due to excessive current.
  5. Thermal Shutdown: The FDC606P features thermal shutdown protection to prevent damage in the event of overheating.
  6. Small Package: The device is available in a compact SOIC-8 package, making it suitable for space-constrained applications.

Applications:

The FDC606P is suitable for a wide range of power applications, including:

  1. Motor Control: The device can be used to control the speed and direction of brushed DC motors in applications such as industrial automation, robotics, and automotive systems.
  2. Power Supplies: The FDC606P can be used in power supply applications to provide efficient and accurate current sensing and control.
  3. Battery Management Systems: The device can be used in battery management systems to monitor and control the charging and discharging of batteries in applications such as electric vehicles and portable electronics.
  4. LED Lighting: The FDC606P can be used in LED lighting applications to provide efficient and accurate current control for driving high-power LEDs.
  5. Energy Harvesting: The device can be used in energy harvesting applications to provide efficient and accurate current sensing and control for converting energy from renewable sources such as solar panels and wind turbines.

Overall, the FDC606P is a versatile and high-performance MOSFET driver that offers a range of features and benefits for power applications requiring efficient and accurate current sensing and control.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Standard Package Name
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Typical Gate Threshold Voltage (V)
Maximum Gate Source Voltage (V)
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

FDC606P Documents

Download datasheets and manufacturer documentation for FDC606P

Ersa Mult Dev A/T Chgs 13/Dec/2021      
Ersa FDC606P      
Ersa Mult Devices 24/Oct/2017       Marking Change 07/Oct/2022      
Ersa FDC606P      
Ersa Marking Change 17/Nov/2021       Marking Change 07/Oct/2022      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDC606P      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service