onsemi

FDC642P

The FDC642P is a high voltage, N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and battery management systems.

Description:

The FDC642P is a power MOSFET with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 4.2A. It features a low on-state resistance (RDS(on)) of 65 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power conversion circuits.

Features:

• High voltage rating: 600V VDS
• High current capability: 4.2A continuous drain current
• Low on-state resistance: 65 milliohms maximum (typical)
• N-channel MOSFET
• Logic level gate compatible
• Avalanche energy capable
• Suitable for use in a wide range of power electronic applications

Applications:

The FDC642P is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Battery management systems
• DC-DC converters
• Inverters
• Class D audio amplifiers
• High voltage switch mode power supplies (SMPS)

Overall, the FDC642P is a versatile and high-performance MOSFET that offers excellent electrical characteristics and is well-suited for use in a wide range of power electronic applications.