onsemi_FDC653N

onsemi
FDC653N  
Single FETs, MOSFETs

onsemi
FDC653N
278-FDC653N
Ersa
onsemi-FDC653N-datasheets-4761504.pdf
MOSFET N-CH 30V 5A SUPERSOT6
In Stock : 6862

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FDC653N Description

The FDC653N is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a N-channel, logic level enhancement mode device that is designed for use in a variety of applications.

Description:

The FDC653N is a high-density, vertical DMOS transistor that features a low on-state resistance (RDS(on)) and fast switching capabilities. It is available in a surface-mount TO-220 package, making it suitable for use in a wide range of applications.

Features:

  • N-channel, logic level enhancement mode MOSFET
  • Low on-state resistance (RDS(on)) for efficient power management
  • Fast switching capabilities for improved performance
  • High-density, vertical DMOS transistor design for improved power handling
  • Available in a surface-mount TO-220 package for easy integration into a variety of applications

Applications:

The FDC653N is suitable for use in a variety of applications, including:

  • Switching regulators
  • DC-to-DC converters
  • Motor control
  • Class D audio amplifiers
  • Power management in battery-powered devices
  • Industrial control systems

Overall, the FDC653N is a versatile and efficient MOSFET that offers excellent performance and reliability in a wide range of applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Supplier Package
Maximum IDSS (uA)
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
Standard Package Name
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Typical Gate to Drain Charge (nC)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Maximum Power Dissipation on PCB @ TC=25°C (W)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Typical Drain Source Resistance @ 25°C (mOhm)
Typical Gate Threshold Voltage (V)
Maximum Gate Source Voltage (V)
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

FDC653N Documents

Download datasheets and manufacturer documentation for FDC653N

Ersa FDC63yyy 14/Aug/2020      
Ersa FDC653N      
Ersa Marking Change 07/Oct/2022       Binary Year Code Marking 15/Jan/2014      
Ersa Marking Change 17/Nov/2021       Marking Change 07/Oct/2022      
Ersa onsemi RoHS       onsemi REACH       Material Declaration FDC653N      

Shopping Guide

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