onsemi_FDC653N
original

onsemi
FDC653N

278-FDC653N
PDF Datasheet
N-Channel JFET 30V 5A 35mR SOT-23-6 SMD
22 Weeks

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Tech Specifications

Package/Case
SOT-23-6
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35MR
Dual Supply Voltage
30V
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FDC653N Description

The FDC653N is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a N-channel, logic level enhancement mode device that is designed for use in a variety of applications.

Description:

The FDC653N is a high-density, vertical DMOS transistor that features a low on-state resistance (RDS(on)) and fast switching capabilities. It is available in a surface-mount TO-220 package, making it suitable for use in a wide range of applications.

Features:

  • N-channel, logic level enhancement mode MOSFET
  • Low on-state resistance (RDS(on)) for efficient power management
  • Fast switching capabilities for improved performance
  • High-density, vertical DMOS transistor design for improved power handling
  • Available in a surface-mount TO-220 package for easy integration into a variety of applications

Applications:

The FDC653N is suitable for use in a variety of applications, including:

  • Switching regulators
  • DC-to-DC converters
  • Motor control
  • Class D audio amplifiers
  • Power management in battery-powered devices
  • Industrial control systems

Overall, the FDC653N is a versatile and efficient MOSFET that offers excellent performance and reliability in a wide range of applications.

FAQ

What is the standard lead time for FDC653N?
The standard lead time for FDC653N is 22 Weeks.
What voltage specification is listed for FDC653N?
What is the mounting type of FDC653N?
What package or case is FDC653N available in?
Is FDC653N currently in stock?
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