onsemi_FDC655BN_NBNN007
onsemi_FDC655BN_NBNN007
original

onsemi
FDC655BN_NBNN007

278-FDC655BN_NBNN007
MOSFET N-CH 30V 6.3A SUPERSOT6

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
SuperSOT™-6
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
800mW
Package / Case
SOT-23-6 Thin, TSOT-23-6
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FDC655BN_NBNN007 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the FDC655BN_NBNN007 belongs to can be classified under the Discrete Semiconductors. FDC655BN_NBNN007 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. FDC655BN_NBNN007 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for FDC655BN_NBNN007?
The listed voltage-related specification for FDC655BN_NBNN007 is 30 V.
What operating temperature range does FDC655BN_NBNN007 support?
What is the mounting type of FDC655BN_NBNN007?
Are there related or alternative parts for FDC655BN_NBNN007?
What is FDC655BN_NBNN007?
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