onsemi
FDP2D9N12C  
Single FETs, MOSFETs

onsemi
FDP2D9N12C
278-FDP2D9N12C
Ersa
onsemi-FDP2D9N12C-datasheets-8418355.pdf
PTNG 120V N-FET TO220
In Stock : 402

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ISO9001
Quality Policy
ISO45001
ISO14001

FDP2D9N12C Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the FDP2D9N12C belongs to can be classified under the Discrete Semiconductors. FDP2D9N12C is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. FDP2D9N12C provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. onsemi plays a crucial role in ensuring the smooth flow of goods and meeting market demand. onsemi is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, onsemi builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

PCB changed
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Product Status
Supplier Device Package
Automotive
Drain to Source Voltage (Vdss)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Supplier Package
Package / Case
Technology
REACH Status
Package Height
Mfr
Channel Type
Vgs (Max)
EU RoHS
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Package Length
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Series
Operating Junction Temperature (°C)
Tab
Current - Continuous Drain (Id) @ 25°C
Part Status
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Package Width
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

FDP2D9N12C Documents

Download datasheets and manufacturer documentation for FDP2D9N12C

Ersa Wafer Fab Change 18/Nov/2021      
Ersa FDP2D9N12C      
Ersa Mult Dev EOL 30/Mar/2022      
Ersa onsemi RoHS       onsemi REACH      

Shopping Guide

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