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FDN302P

The FDN302P is a high-performance N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FDN302P is a surface-mount MOSFET with a drain-source voltage (VDS) of -30V, a continuous drain current (ID) of 4.2A, and a pulsed drain current (IDSM) of 22A. It has a low on-state resistance (RDS(on)) of 4.5 milliohms maximum, which helps to minimize power dissipation and improve efficiency in power electronic circuits.

Features:

• N-channel power MOSFET
• Surface-mount package
• Low on-state resistance (RDS(on)) of 4.5 milliohms maximum
• High drain-source voltage (VDS) of -30V
• Continuous drain current (ID) of 4.2A
• Pulsed drain current (IDSM) of 22A
• Fast switching times for improved efficiency
• Suitable for use in a wide range of power electronic applications

Applications:

The FDN302P is suitable for use in a variety of power electronic applications, including:

• Motor control circuits
• Power supplies
• Energy management systems
• Battery management systems
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• DC-DC converters

Overall, the FDN302P is a high-performance MOSFET that offers excellent efficiency and fast switching times, making it ideal for use in a wide range of power electronic applications. Its low on-state resistance and high current handling capability make it a popular choice for designers looking for a reliable and efficient power MOSFET.