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FDD3682

The FDD3682 is a high voltage, high-speed N-channel MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FDD3682 is an N-channel MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 9A. It features a low on-state resistance (Rds(on)) of 55 milliohms maximum, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (Vgs(th)) of -3V to -4.5V.

Features:

• High voltage, high-speed operation
• Low on-state resistance for improved efficiency
• Fast switching speed for reduced switching losses
• High input impedance for easy drive capability
• Avalanche energy capable

Applications:

The FDD3682 is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Battery management systems
• Industrial control systems
• Automotive applications

Overall, the FDD3682 is a versatile and high-performance MOSFET that can help to improve the efficiency and reliability of power electronic systems.