onsemi

FDFM2P110

FDFM2P110 Description

The FDFM2P110 is a PowerTrench® MOSFET P-CH 20V 3.5A MICROFET from onsemi. It features a Schottky Diode (Isolated) and is mounted on a 3x3mm MicroFET package. With a maximum drain-source voltage of 20V and a continuous drain current of 3.5A at 25°C, this MOSFET is designed for high-performance applications.

FDFM2P110 Features

• Input Capacitance (Ciss): 280 pF @ 10V
• Gate Charge (Qg): 4 nC @ 4.5V
• Technology: MOSFET (Metal Oxide)
• Series: PowerTrench®
• Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Power Dissipation (Max): 2W (Ta)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095
• Mounting Type: Surface Mount

FDFM2P110 Applications

The FDFM2P110 is ideal for use in various high-power applications, including:

1. Power Management: Its high drain current and low Rds On make it suitable for power management circuits.
2. Automotive Electronics: The FDFM2P110 can be used in automotive applications due to its high voltage and current ratings.
3. Industrial Control Systems: Its robust performance and low Rds On make it suitable for industrial control systems.
4. Telecommunications: The FDFM2P110 can be used in telecommunications equipment due to its high power dissipation capability.

Conclusion of FDFM2P110

The FDFM2P110 is a high-performance PowerTrench® MOSFET P-CH 20V 3.5A MICROFET from onsemi. Its unique features, such as the Schottky Diode (Isolated) and low Rds On, make it an ideal choice for high-power applications. However, it is important to note that the product is now obsolete. Despite this, its robust performance and unique features make it a valuable component for applications that require high power and voltage ratings.