onsemi_FDG326P
original

onsemi
FDG326P

278-FDG326P
PDF Datasheet
MOSFET P-CH 20V 1.5A SC70-6

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Tech Specifications

Package/Case
SC
Continuous Drain Current (ID)
1.5A
Current Rating
-1.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
20V
Fall Time
13ns
Gate to Source Voltage (Vgs)
8V
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FDG326P Description

FDG326P Description

The FDG326P is a PowerTrench® P-channel MOSFET from onsemi, designed for high-performance applications requiring robust power management. It features an Input Capacitance (Ciss) of up to 467 pF at 10 V, ensuring fast switching speeds. With a maximum Gate Charge (Qg) of 7 nC at 4.5 V, it minimizes power losses during operation. This MOSFET is designed to handle a Drain to Source Voltage (Vdss) of up to 20 V and can dissipate up to 750mW of power, making it suitable for a variety of power electronics applications.

FDG326P Features

  • Technology: Advanced MOSFET (Metal Oxide) technology for reliable performance.
  • Input Capacitance (Ciss): 467 pF @ 10 V for fast switching.
  • Gate Charge (Qg): 7 nC @ 4.5 V for low power consumption.
  • Drain to Source Voltage (Vdss): 20 V for high-voltage applications.
  • Power Dissipation: 750mW (Ta) for efficient heat management.
  • Rds On (Max): 140mOhm @ 1.5A, 4.5V for low resistance and high current handling.
  • Vgs(th) (Max): 1.5V @ 250µA for precise voltage control.
  • Mounting Type: Surface Mount for compact design and ease of integration.
  • Series: PowerTrench® for enhanced performance and reliability.

FDG326P Applications

The FDG326P is ideal for applications where high power management and efficient heat dissipation are critical. Some specific use cases include:

  • Power Management Systems: Due to its high Vdss and power dissipation capabilities.
  • Automotive Electronics: For managing power in various automotive systems.
  • Industrial Control Systems: For reliable operation in demanding industrial environments.

Conclusion of FDG326P

While the FDG326P is an obsolete product, it was a high-performance MOSFET designed for power electronics applications. Its unique features, such as low input capacitance and gate charge, made it suitable for applications requiring fast switching and low power consumption. Although it is no longer in production, its legacy remains in the reliability and performance it offered during its time. For current needs, onsemi offers a range of advanced MOSFETs that can meet or exceed the performance of the FDG326P.

FAQ

What voltage specification is listed for FDG326P?
The listed voltage-related specification for FDG326P is -20V.
What is FDG326P?
Are there related or alternative parts for FDG326P?
What operating temperature range does FDG326P support?
What package or case is FDG326P available in?
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