onsemi

FDG8850NZ  

FET, MOSFET Arrays

The FDG8850NZ is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The FDG8850NZ is an N-channel enhancement mode field effect transistor (MOSFET). It is housed in a TO-220 package, which is a popular and widely used package for power transistors. The device has a maximum drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 4.2A, and a gate-source voltage (VGS) range of -1V to +10V.

Features:

• High voltage operation: The FDG8850NZ is designed to operate at high voltages, making it suitable for use in applications that require high voltage switching or power management.
• Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency in switching applications.
• Fast switching speed: The FDG8850NZ has a fast switching speed, which makes it suitable for use in high frequency applications.
• High input impedance: The device has a high input impedance, which allows it to be easily driven by a variety of control circuits.

Applications:

The FDG8850NZ is suitable for use in a variety of applications, including:

• High voltage switching: The device can be used in high voltage switching applications, such as in power supplies or motor control circuits.
• Power management: The FDG8850NZ can be used in power management circuits, such as in battery management systems or power converters.
• Motor control: The device can be used in motor control applications, such as in industrial automation or robotics.
• Inverters: The FDG8850NZ can be used in inverter circuits, such as in solar power systems or uninterruptible power supplies (UPS).

Overall, the FDG8850NZ is a versatile and high performance MOSFET transistor that is suitable for use in a wide range of high voltage switching and power management applications. Its high input impedance, fast switching speed, and low on-state resistance make it an excellent choice for designers looking for a reliable and efficient solution for their high voltage applications.

FDG8850NZ Documents

Download datasheets and manufacturer documentation for FDG8850NZ

PCN Assembly/Origin :

Mult Dev 27/Sep/2023      

Datasheets :

FDG8850NZ      

PCN Packaging :

Mult Devices 24/Oct/2017       Binary Year Code Marking 15/Jan/2014      

PCN Design/Specification :

2N7002x/BSSx/FDGx/FDVx/NDS06x 10/May/2022       Marking Lay-out Implementation 07/Oct/2022      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FDG8850NZ