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FDMS0309AS  

Single FETs, MOSFETs

The FDMS0309AS is a high voltage N-channel MOSFET from ON Semiconductor. It is designed for high voltage applications and offers a number of features that make it suitable for a wide range of uses.

Description:

The FDMS0309AS is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (V_DSS) of -100V. It is housed in a TO-220AB package, which is suitable for a variety of applications.

Features:

• High voltage operation: The FDMS0309AS is designed to operate at high voltages, with a maximum drain-to-source voltage of -100V.
• Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
• Fast switching: The FDMS0309AS has a fast switching time, which makes it suitable for use in applications that require high-speed operation.
• High input impedance: The device has a high input impedance, which makes it easy to drive and reduces the risk of unwanted oscillations.

Applications:

The FDMS0309AS is suitable for a wide range of applications, including:

• Switching regulators
• Motor control
• High voltage switching
• Power management
• Inverters

Overall, the FDMS0309AS is a versatile and high-performance MOSFET that offers a number of features that make it suitable for a wide range of high voltage applications.

FDMS0309AS Documents

Download datasheets and manufacturer documentation for FDMS0309AS

Datasheets :

FDMS0309AS      

PCN Packaging :

Mult Devices 24/Oct/2017      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

Material Declaration FDMS0309AS