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FDMS3669S  

FET, MOSFET Arrays

FDMS3669S is a high-power discrete transistor offered by ON Semiconductor. It is a NPN Darlington transistor that is designed for high-power applications.

Description:

The FDMS3669S is a high-power NPN Darlington transistor that features high current gain, high voltage gain, and high power dissipation capabilities. It is available in a TO-247AC package, which is suitable for high-power applications.

Features:

• High current gain (hFE) of 5000 minimum
• High voltage gain (hFE) of 30,000 minimum
• High power dissipation capability of 150 watts
• Collector-emitter voltage (VCEO) of 1500 volts
• Collector-base voltage (VCBO) of 1500 volts
• Emitter-base voltage (VEBO) of 6 volts
• Low saturation voltage (VCE(sat)) of 2 volts maximum
• High switching speed
• High thermal resistance

Applications:

The FDMS3669S is suitable for a wide range of high-power applications, including:

• Power switching and amplification in industrial control systems
• Motor control and drive systems
• Power supplies and inverters
• Audio amplifiers and loudspeaker drivers
• Automotive and motorcycle ignition systems
• High-power switching and amplification in renewable energy systems
  It is important to note that the FDMS3669S is a high-power transistor and should be used with appropriate heat sinking and driving circuitry to ensure safe and reliable operation. Additionally, proper design and layout considerations should be taken into account to minimize parasitic inductance and ensure optimal performance.

FDMS3669S Documents

Download datasheets and manufacturer documentation for FDMS3669S

PCN Assembly/Origin :

Mult Dev Assembly 11/Mar/2020      

Datasheets :

FDMS3669S      

PCN Packaging :

Mult Devices 24/Oct/2017      

HTML Datasheet :

FDMS3669S      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FDMS3669S