onsemi_FDPC8012S

onsemi
FDPC8012S  
FET, MOSFET Arrays

onsemi
FDPC8012S
289-FDPC8012S
Ersa
onsemi-FDPC8012S-datasheets-6642840.pdf
MOSFET 2N-CH 25V 13A PWRCLIP-33
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    FDPC8012S Description

    The FDPC8012S is a high-performance power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and energy management systems.

    Description:

    The FDPC8012S is a N-channel power MOSFET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 12A. It features a low on-state resistance (RDS(on)) of 4.5 milliohms, which helps to minimize power losses during operation. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2.5V.

    Features:

    • N-channel power MOSFET
    • 100V drain-source voltage (VDS)
    • 12A continuous drain current (ID)
    • Low on-state resistance (RDS(on)) of 4.5 milliohms
    • Fast switching speed with a typical gate charge (Qg) of 44nC
    • Gate-source threshold voltage (VGS(th)) of 2.5V
    • Suitable for use in a wide range of power conversion applications

    Applications:

    The FDPC8012S is well-suited for use in a variety of power conversion applications, including:

    1. Motor control: The device's low on-state resistance and fast switching speed make it ideal for use in motor control applications, where precise control of the motor speed and torque is required.
    2. Power supplies: The FDPC8012S can be used in power supply applications, where it can help to minimize power losses and improve efficiency.
    3. Energy management systems: The device's low on-state resistance and fast switching speed make it suitable for use in energy management systems, where it can help to optimize energy usage and reduce energy costs.

    Overall, the FDPC8012S is a high-performance power MOSFET that offers excellent efficiency and performance in a wide range of power conversion applications. Its low on-state resistance and fast switching speed make it an ideal choice for motor control, power supplies, and energy management systems.

    Tech Specifications

    Operating Temperature
    FET Feature
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    ECCN
    Mounting Type
    Product Status
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Series
    Package / Case
    Technology
    Power - Max
    REACH Status
    Mfr
    Current - Continuous Drain (Id) @ 25°C
    HTSUS
    Package
    RoHS Status
    Base Product Number
    Moisture Sensitivity Level (MSL)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    Typical Turn-Off Delay Time (ns)
    HTS
    Maximum Gate Source Leakage Current (nA)
    Number of Elements per Chip
    ECCN (US)
    Typical Rise Time (ns)
    PPAP
    Maximum Power Dissipation (mW)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Automotive
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Supplier Package
    Maximum IDSS (uA)
    Typical Fall Time (ns)
    Package Height
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Maximum Gate Source Voltage (V)
    Maximum Drain Source Voltage (V)
    SVHC Exceeds Threshold
    Maximum Drain Source Resistance (mOhm)
    Package Length
    Pin Count
    Mounting
    Part Status
    SVHC
    Maximum Gate Threshold Voltage (V)
    Package Width
    Typical Gate Charge @ Vgs (nC)

    FDPC8012S Documents

    Download datasheets and manufacturer documentation for FDPC8012S

    Ersa Mult Dev Assembly 11/Mar/2020      
    Ersa FDPC8012S      
    Ersa Mult Devices 24/Oct/2017      
    Ersa Logo 17/Aug/2017      
    Ersa onsemi RoHS       Material Declaration FDPC8012S       onsemi REACH      

    Shopping Guide

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