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FDPC8012S

The FDPC8012S is a high-performance power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and energy management systems.

Description:

The FDPC8012S is a N-channel power MOSFET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 12A. It features a low on-state resistance (RDS(on)) of 4.5 milliohms, which helps to minimize power losses during operation. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2.5V.

Features:

• N-channel power MOSFET
• 100V drain-source voltage (VDS)
• 12A continuous drain current (ID)
• Low on-state resistance (RDS(on)) of 4.5 milliohms
• Fast switching speed with a typical gate charge (Qg) of 44nC
• Gate-source threshold voltage (VGS(th)) of 2.5V
• Suitable for use in a wide range of power conversion applications

Applications:

The FDPC8012S is well-suited for use in a variety of power conversion applications, including:

1. Motor control: The device's low on-state resistance and fast switching speed make it ideal for use in motor control applications, where precise control of the motor speed and torque is required.
2. Power supplies: The FDPC8012S can be used in power supply applications, where it can help to minimize power losses and improve efficiency.
3. Energy management systems: The device's low on-state resistance and fast switching speed make it suitable for use in energy management systems, where it can help to optimize energy usage and reduce energy costs.

Overall, the FDPC8012S is a high-performance power MOSFET that offers excellent efficiency and performance in a wide range of power conversion applications. Its low on-state resistance and fast switching speed make it an ideal choice for motor control, power supplies, and energy management systems.