onsemi_NVMFD5C478NLT1G

onsemi
NVMFD5C478NLT1G  
FET, MOSFET Arrays

onsemi
NVMFD5C478NLT1G
289-NVMFD5C478NLT1G
Ersa
onsemi-NVMFD5C478NLT1G-datasheets-8459861.pdf
MOSFET 2N-CH 40V 10.5A 8DFN
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NVMFD5C478NLT1G Description

NVMFD5C478NLT1G Description

The NVMFD5C478NLT1G is a high-performance MOSFET from onsemi, designed for automotive applications. This 2N-channel MOSFET operates at a maximum drain-source voltage (Vdss) of 40V and can handle continuous drain currents (Id) of up to 10.5A at 25°C (Ta) and 29A at Tc. With a low on-resistance (Rds On) of 14.5mOhm at 7.5A and 10V, the NVMFD5C478NLT1G offers efficient power management in automotive systems.

NVMFD5C478NLT1G Features

  • Technology: MOSFET (Metal Oxide) - Reliable and efficient power switching
  • Grade: Automotive - Designed for demanding automotive environments
  • Mounting Type: Surface Mount - Ideal for compact automotive electronics
  • Input Capacitance (Ciss): 420pF @ 25V - Minimizes capacitive effects
  • Gate Charge (Qg): 8.1nC @ 10V - Reduces switching losses
  • Vgs(th): 2.2V @ 20µA - Ensures reliable threshold voltage
  • Power - Max: 3.1W (Ta), 23W (Tc) - Supports high-power automotive applications
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Enhanced reliability in humid environments
  • RoHS Status: ROHS3 Compliant - Environmentally friendly
  • REACH Status: REACH Unaffected - Compliant with European chemical regulations

NVMFD5C478NLT1G Applications

The NVMFD5C478NLT1G is ideal for a variety of automotive applications, including:

  1. Power Management: Efficient power switching in automotive power systems
  2. Battery Management: Reliable voltage and current control in battery management systems
  3. Motor Control: Precise control of electric motors in electric vehicles (EVs) and hybrid electric vehicles (HEVs)
  4. LED Lighting: Efficient power management for automotive LED lighting systems
  5. Infotainment Systems: Reliable power switching for automotive infotainment systems

Conclusion of NVMFD5C478NLT1G

The NVMFD5C478NLT1G is a high-performance, automotive-grade MOSFET from onsemi, offering efficient power management and reliable operation in demanding automotive environments. With its low on-resistance, low gate charge, and high current handling capabilities, the NVMFD5C478NLT1G is an excellent choice for automotive power management, battery management, motor control, LED lighting, and infotainment systems. Its compliance with RoHS and REACH regulations makes it an environmentally friendly option for automotive electronics.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Power - Max
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

NVMFD5C478NLT1G Documents

Download datasheets and manufacturer documentation for NVMFD5C478NLT1G

Ersa NVMFD5C478NL      
Ersa MPN Label Update 08/Sep/2021       MPN label update 11/Oct/2021      
Ersa NVMFD5C478NL      
Ersa onsemi RoHS       onsemi REACH       Material Declaration NVMFD5C478NLT1G      

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