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NTZD3152PT1G  

FET, MOSFET Arrays

The NTZD3152PT1G is a high-performance N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of applications, including power switching and amplification in power electronics circuits.

Description:

The NTZD3152PT1G is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of 4.2A. It has a low on-state resistance (RDS(on)) of 4.5 milliohms, which allows it to operate efficiently in high-current applications.

Features:

• N-channel MOSFET transistor
• Surface-mount package
• Drain-source voltage (VDS) of -30V
• Continuous drain current (ID) of 4.2A
• Low on-state resistance (RDS(on)) of 4.5 milliohms
• Fast switching speed
• High input impedance
• Low gate charge
• Low internal capacitance

Applications:

The NTZD3152PT1G is suitable for use in a variety of power electronics applications, including:

• Power switching and amplification in power electronics circuits
• Motor control and drive circuits
• Battery management systems
• LED lighting and display circuits
• Power supplies and voltage regulation circuits
• Automotive electronics

The NTZD3152PT1G is a high-performance MOSFET transistor that offers excellent efficiency and reliability in a wide range of power electronics applications. Its low on-state resistance and fast switching speed make it an ideal choice for high-current applications, while its high input impedance and low gate charge make it easy to drive and control.

NTZD3152PT1G Documents

Download datasheets and manufacturer documentation for NTZD3152PT1G

PCN Assembly/Origin :

Mult Dev 24/Apr/2020      

Datasheets :

NTZD3152P      

PCN Packaging :

Mult Devices 27/Oct/2017       Carrier Tape 15/Aug/2017      

HTML Datasheet :

NTZD3152P      

Environmental Information :

Material Declaration NTZD3152PT1G       onsemi RoHS       onsemi REACH