onsemi_FDMS6673BZ
original

onsemi
FDMS6673BZ

278-FDMS6673BZ
PDF Datasheet
P-Channel MOSFET -30V, 6.8mR, 15.2A, Surface Mount
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Tech Specifications

Continuous Drain Current (ID)
15.2A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
6.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
79ns
Gate to Source Voltage (Vgs)
25V
Height
1.05mm
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FDMS6673BZ Description

The FDMS6673BZ is a high voltage, high-speed MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor control, power conversion, and power management.

Description:

The FDMS6673BZ is a N-channel, logic level, high voltage MOSFET. It features a high input impedance and low output impedance, making it ideal for use in high voltage applications. The device also has a low gate charge and fast switching speeds, which can help to improve overall system efficiency.

Features:

  • N-channel, logic level MOSFET
  • High input impedance and low output impedance
  • Low gate charge and fast switching speeds
  • High voltage rating of up to 600V
  • Suitable for use in a wide range of applications, including motor control, power conversion, and power management

Applications:

The FDMS6673BZ is suitable for use in a variety of applications, including:

  • Motor control
  • Power conversion
  • Power management
  • High voltage switching
  • Battery management systems
  • Industrial control systems

Overall, the FDMS6673BZ is a high performance MOSFET that offers excellent performance and reliability in a wide range of applications. Its high input impedance, low output impedance, and fast switching speeds make it an ideal choice for use in high voltage applications.

FAQ

What voltage specification is listed for FDMS6673BZ?
The listed voltage-related specification for FDMS6673BZ is -30V.
What is the standard lead time for FDMS6673BZ?
What is the mounting type of FDMS6673BZ?
What package or case is FDMS6673BZ available in?
Is FDMS6673BZ currently in stock?
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