onsemi

FDMS86163P  

Single FETs, MOSFETs

The FDMS86163P is a high-performance, high-voltage, integrated gate-commutated (IGC) driver from ON Semiconductor. It is designed to drive high-voltage power MOSFETs and IGBTs in a wide range of applications, including motor control, power supplies, and renewable energy systems.

Description:

The FDMS86163P is a monolithic integrated circuit that provides all the necessary gate drive functions for high-voltage power MOSFETs and IGBTs. It includes a high-voltage charge pump, a gate driver with independent control of the turn-on and turn-off rates, and a comprehensive set of protection features.

Features:

1. High-Voltage Operation: The FDMS86163P can operate from supply voltages up to 60V, making it suitable for driving high-voltage power MOSFETs and IGBTs.
2. Independent Gate Drive Control: The device features independent control of the turn-on and turn-off rates, allowing for precise control of the switching behavior of the power MOSFETs and IGBTs.
3. Charge Pump: The integrated charge pump allows for efficient use of the supply voltage and reduces the number of external components required.
4. Protection Features: The FDMS86163P includes a range of protection features, including overcurrent protection, overvoltage protection, and undervoltage lockout.
5. Small Package: The device is available in a compact SOIC-8 package, making it suitable for space-constrained applications.

Applications:

The FDMS86163P is suitable for a wide range of applications, including:

1. Motor Control: The device can be used to drive high-voltage power MOSFETs and IGBTs in brushless DC motor controllers, stepper motor controllers, and AC motor controllers.
2. Power Supplies: The FDMS86163P can be used to drive high-voltage power MOSFETs and IGBTs in power supply applications, such as switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
3. Renewable Energy Systems: The device can be used to drive high-voltage power MOSFETs and IGBTs in renewable energy systems, such as solar inverters and wind turbine converters.
4. Electric Vehicles: The FDMS86163P can be used to drive high-voltage power MOSFETs and IGBTs in electric vehicle (EV) applications, such as traction motor controllers and battery chargers.

In summary, the FDMS86163P is a versatile, high-performance gate driver that is suitable for a wide range of high-voltage power applications. Its independent gate drive control, integrated charge pump, and comprehensive set of protection features make it an ideal choice for driving high-voltage power MOSFETs and IGBTs in demanding applications.

FDMS86163P Documents

Download datasheets and manufacturer documentation for FDMS86163P

PCN Assembly/Origin :

PQFN56 Wire Source 9/Dec/2020      

Datasheets :

FDMS86163P      

PCN Packaging :

Mult Devices 24/Oct/2017      

PCN Design/Specification :

Logo 17/Aug/2017      

Environmental Information :

onsemi RoHS       onsemi REACH       Material Declaration FDMS86163P